Infineon takes over Sican IP portfolio
Infineon takes over Sican IP portfolio
By Peter Clarke, EE Times
October 6, 2000 (1:18 p.m. EST)
URL: http://www.eetimes.com/story/OEG20001006S0017
LONDON Infineon Technologies AG (Munich, Germany) has effectively taken control of the semiconductor intellectual property (IP) portfolio of Sican GmbH, and has picked up a group of Sican's chip and core design engineers. Sican (Hannover, Germany), a supplier of IP and design services, transferred its assets and staff to a new company named Sci-worx GmbH (Hannover, Germany), in which Infineon has taken a 74.9 percent stake. With about 300 employees previously employed by Sican, Sci-worx will still operate as an IP provider, said Juergen Ruprecht, chief executive officer of Sci-worx. Ruprecht held the same role at Sican. A spokeswoman for Sci-worx said that Sican will continue to exist only as a holding company for Microtec GmbH (Stuttgart, Germany).
Related Semiconductor IP
- Multi-channel, multi-rate Ethernet aggregator - 10G to 400G AX (e.g., AI)
- Multi-channel, multi-rate Ethernet aggregator - 10G to 800G DX
- 200G/400G/800G Ethernet PCS/FEC
- 50G/100G MAC/PCS/FEC
- 25G/10G/SGMII/ 1000BASE-X PCS and MAC
Related News
- Silicon Creations Expands Clocking IP Portfolio on TSMC N2P Technology including Novel Temperature Sensor Design
- ListenAI Licenses Ceva-Waves Wi-Fi 6 IP, Bringing Seamless Wireless Connectivity to its Edge AI Portfolio
- Imagination takes efficiency up a level with latest D-Series GPU IP
- Analog Bits to Demonstrate IP Portfolio on TSMC 3nm and 2nm Processes at TSMC 2025 Technology Symposium
Latest News
- How CXL 3.1 and PCIe 6.2 are Redefining Compute Efficiency
- Secure-IC at Computex 2025: Enabling Trust in AI, Chiplets, and Quantum-Ready Systems
- Automotive Industry Charts New Course with RISC-V
- Xiphera Partners with Siemens Cre8Ventures to Strengthen Automotive Security and Support EU Chips Act Sovereignty Goals
- NY CREATES and Fraunhofer Institute Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale