The fabless-foundry model will survive (at least through 14-nm)
Handel Jones, International Business Strategies Inc.,
EETimes (6/15/2012 6:59 PM EDT)
Editor's note: This article was rewritten in rebutal to comments made in April by Mark Bohr, an Intel Senior Fellow. As reported by EE Times, Bohr said the fabless-foundry model is"collapsing."
What are the problems?
1. Parametric yields at 28 nm are not at expected levels. Process variables such as random dopant fluctuations, line width and line gap variations, and via resistance, which affect RC-related timing issues, result in both unpredictable and low parametric yields for the targeted specifications. The process variables have increasing impact on leakage, power consumption and yields.
To read the full article, click here
Related Semiconductor IP
- 5G-NTN Modem IP for Satellite User Terminals
- HBM4E Controller IP
- 14-bit 12.5MSPS SAR ADC - Tower 65nm
- 5G-Advanced Modem IP for Edge and IoT Applications
- TSN Ethernet Endpoint Controller 10Gbps
Related News
- TSMC Selects Legend's Model Diagnoser for Standard Cell Library Quality Assurance
- HDL Design House announces AT25DF161 VITAL behavioral model
- Carbon Design Systems Adds Co-Simulation Model Library to Expanding System-Level Validation Tool Suite
- Carbon Automates AXI Interconnect Model Creation
Latest News
- OpenTitan Ships in Chromebooks: First Production Deployment
- Breker Verification Systems Adds RISC‑V Industry Expert Larry Lapides to its Advisory Board
- Weebit Nano’s ReRAM Selected for Korean National Compute-in-Memory Program
- Marvell Extends ZR/ZR+ Leadership with Industry-first 1.6T ZR/ZR+ Pluggable and 2nm Coherent DSPs for Secure AI Scale-across Interconnects
- BrainChip Announces Neuromorphyx as Strategic Customer and Go-to-Market Partner for AKD1500 Neuromorphic Processor