EUV, 7nm Road Maps Detailed
7nm looks good, but resists lag at 5nm
Rick Merritt, EETimes
1/18/2018 01:01 AM EST
HALF MOON BAY, Calif. — Extreme ultraviolet lithography (EUV) is set to enable 10nm and 7nm process nodes over the next few years, but significant work is still needed on photoresists to enable 5nm chips, according to an analysis released at the Industry Strategy Symposium here.
At the same time EUV maker ASML announced it shipped 10 EUV systems last year and will ship 20-22 more this year. The systems will have or at least support a 250W laser light source needed to produce 125 wafers/hour.
“The main pieces for EUV at 7nm are in place, and we will see some volume of wafers this year…but photoresist defects are still an order of magnitude too high for 5nm,” said Scotten Jones, president of IC Knowledge.
To read the full article, click here
Related Semiconductor IP
- Flash Memory LDPC Decoder IP Core
- SLM Signal Integrity Monitor
- All Digital Fractional-N RF Frequency Synthesizer PLL in GlobalFoundries 22FDX
- USB 4.0 V2 PHY - 4TX/2RX, TSMC N3P , North/South Poly Orientation
- TSMC CLN5FF GUCIe LP Die-to-Die PHY
Related News
- Samsung Strengthens Advanced Foundry Portfolio With New 11nm LPP and 7nm LPP With EUV Technology
- Qualcomm Taps Samsung's 7nm EUV for 5G
- Samsung Complements the Production of its Revolutionary 7nm EUV with Exceptional SAFE Ecosystem Solutions
- Samsung Electronics Starts Production of EUV-based 7nm LPP Process
Latest News
- SEMIFIVE Files for Pre-IPO Review on KRX
- Innosilicon Scales LPDDR5X/5/4X/4 and DDR5/4 Combo IPs to 28nm and 22nm, Cementing Its Position as the ‘One Stop’ for Memory Interface Solutions
- Synopsys Completes Acquisition of Ansys
- Zephyr 4.0 Now Available for SCR RISC-V IP
- Lattice Semiconductor and Missing Link Electronics Become Partners to Accelerate FPGA Design Projects