EUV, 7nm Road Maps Detailed
7nm looks good, but resists lag at 5nm
Rick Merritt, EETimes
1/18/2018 01:01 AM EST
HALF MOON BAY, Calif. — Extreme ultraviolet lithography (EUV) is set to enable 10nm and 7nm process nodes over the next few years, but significant work is still needed on photoresists to enable 5nm chips, according to an analysis released at the Industry Strategy Symposium here.
At the same time EUV maker ASML announced it shipped 10 EUV systems last year and will ship 20-22 more this year. The systems will have or at least support a 250W laser light source needed to produce 125 wafers/hour.
“The main pieces for EUV at 7nm are in place, and we will see some volume of wafers this year…but photoresist defects are still an order of magnitude too high for 5nm,” said Scotten Jones, president of IC Knowledge.
To read the full article, click here
Related Semiconductor IP
- ISO/IEC 7816 Verification IP
- 50MHz to 800MHz Integer-N RC Phase-Locked Loop on SMIC 55nm LL
- Simulation VIP for AMBA CHI-C2C
- Process/Voltage/Temperature Sensor with Self-calibration (Supply voltage 1.2V) - TSMC 3nm N3P
- USB 20Gbps Device Controller
Related News
- Samsung Strengthens Advanced Foundry Portfolio With New 11nm LPP and 7nm LPP With EUV Technology
- Qualcomm Taps Samsung's 7nm EUV for 5G
- Samsung Complements the Production of its Revolutionary 7nm EUV with Exceptional SAFE Ecosystem Solutions
- Samsung Electronics Starts Production of EUV-based 7nm LPP Process
Latest News
- Quintauris and Andes Technology Partner to Scale RISC-V Ecosystem
- Europe Achieves a Key Milestone with the Europe’s First Out-of-Order RISC-V Processor chip, with the eProcessor Project
- Intel Unveils Panther Lake Architecture: First AI PC Platform Built on 18A
- TSMC September 2025 Revenue Report
- Andes Technology Hosts First-Ever RISC-V CON in Munich, Powering Next-Gen AI and Automotive Solutions