EUV, 7nm Road Maps Detailed
7nm looks good, but resists lag at 5nm
1/18/2018 01:01 AM EST
HALF MOON BAY, Calif. — Extreme ultraviolet lithography (EUV) is set to enable 10nm and 7nm process nodes over the next few years, but significant work is still needed on photoresists to enable 5nm chips, according to an analysis released at the Industry Strategy Symposium here.
At the same time EUV maker ASML announced it shipped 10 EUV systems last year and will ship 20-22 more this year. The systems will have or at least support a 250W laser light source needed to produce 125 wafers/hour.
“The main pieces for EUV at 7nm are in place, and we will see some volume of wafers this year…but photoresist defects are still an order of magnitude too high for 5nm,” said Scotten Jones, president of IC Knowledge.
To read the full article, click here
Related Semiconductor IP
- HBM4 PHY IP
- eFuse Controller IP
- Secure Storage Solution for OTP IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- MIPI D-PHY and FPD-Link (LVDS) Combinational Transmitter for TSMC 22nm ULP
Related News
- Samsung Strengthens Advanced Foundry Portfolio With New 11nm LPP and 7nm LPP With EUV Technology
- Qualcomm Taps Samsung's 7nm EUV for 5G
- Samsung Complements the Production of its Revolutionary 7nm EUV with Exceptional SAFE Ecosystem Solutions
- Samsung Electronics Starts Production of EUV-based 7nm LPP Process
Latest News
- LTSCT and Andes Technology Sign Strategic IP Licensing Master Agreement to accelerate RISC-V Based Advanced Semiconductor Solutions
- Global Semiconductor Sales Increase 29.8% Year-to-Year in November
- BAE Systems Licenses Time Sensitive Networking (TSN) Ethernet IP Cores from CAST
- HBM4 Mass Production Delayed to End of 1Q26 By Spec Upgrades and Nvidia Strategy Adjustments
- ASICLAND Secures USD 17.6 Million Storage Controller Mass Production Contract