EUV, 7nm Road Maps Detailed
7nm looks good, but resists lag at 5nm
Rick Merritt, EETimes
1/18/2018 01:01 AM EST
HALF MOON BAY, Calif. — Extreme ultraviolet lithography (EUV) is set to enable 10nm and 7nm process nodes over the next few years, but significant work is still needed on photoresists to enable 5nm chips, according to an analysis released at the Industry Strategy Symposium here.
At the same time EUV maker ASML announced it shipped 10 EUV systems last year and will ship 20-22 more this year. The systems will have or at least support a 250W laser light source needed to produce 125 wafers/hour.
“The main pieces for EUV at 7nm are in place, and we will see some volume of wafers this year…but photoresist defects are still an order of magnitude too high for 5nm,” said Scotten Jones, president of IC Knowledge.
To read the full article, click here
Related Semiconductor IP
- ASIL B Compliant MIPI CSI-2 CSE2 Security Module
- SHA-256 Secure Hash Algorithm IP Core
- EdDSA Curve25519 signature generation engine
- DeWarp IP
- 6-bit, 12 GSPS Flash ADC - GlobalFoundries 22nm
Related News
- Qualcomm Taps Samsung's 7nm EUV for 5G
- Samsung Complements the Production of its Revolutionary 7nm EUV with Exceptional SAFE Ecosystem Solutions
- Samsung Electronics Starts Production of EUV-based 7nm LPP Process
- Frontier Design EDA Tool Maps Complex ANSI C And SystemC Algorithms To Optimized SoC Implementations
Latest News
- Analog Bits Demonstrates Real-Time On-Chip Power Sensing and Delivery on TSMC N2P Process at TSMC 2026 Technology Symposiums
- TES offers a High-Frequency Synthesizer and Clock Generator IP for X-FAB XT018 - 0.18µm BCD-on-SOI technology
- Faraday Delivers IP Solutions to Enable Endpoint AI Based on UMC’s 28nm SST eFlash
- AiM Future Partners with Metsakuur Company to Commercialize NPU-Integrated Hardware
- ESD Alliance Reports Electronic System Design Industry Posts $5.5 Billion in Revenue in Q4 2025