eFlash IP
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284
IP
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Ultra-low power 32 kHz RC oscillator in TSMC 40 ULP eFlash
- Ultra-low power for best-in-class power consumption of the always-on domain during sleep / deep sleep modes
- Fast wake-up
- Active, shutdown and stand-by modes
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Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
- Very low quiescent and leakage for Low-Power
- Can supply always-on very low load
- Supports wide input voltage range from 2.7V to 5.5V
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TSMC 40 ULP eFlash Combo voltage regulator combining a linear regulator for active mode with an ultra-low quiescent regulator for sleep mode
- Embedded RCU (Regulator Control Unit) to manage booting and safe mode transitions
- Configurable LDO output current to fit the application (from 100 mA to 500 mA)
- Low Bill-of-Material: fully integrated feedback and active compensation loop to reduce the number of additional external passive components
- Low Output Ripple
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GSMC 0.13um Low Power e-Flash 1.5V POR
- Process: GSMC 0.13um IBLP dual gate eFlash process (1.5V/HV)
- Device list: pch, nch, pchh, nchh_wo1, RPPOLYU, PNP10
- Supply voltage: 1.5v±10%;
- Operating junction temperature: - 40°C ~ 125°C
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8Kx16 Bits OTP (One-Time Programmable) IP, VIS 110nm E-Flash 1.5V/3.3V Process
- Fully compatible with VIS 110nm E-Flash process
- Low voltage: 1.5 V ± 10% read and 3.9 V ± 5% program
- High speed: 10-µs program time per bit, and 50-ns read cycle time
- Wide temperature: -40°C to 125°C for read and 10°C to 40°C for program
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40nm eflash 3.3V Programmable 1.1V LDO Regulator with 500mA max. output
- Programmable 0.9V to 1.2V output voltage in 100mV steps
- 2% LDO output variation across process, supply and temperature
- 50uA quiescent current