Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Overview
Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Key Features
- Very low quiescent and leakage for Low-Power
- Can supply always-on very low load
- Supports wide input voltage range from 2.7V to 5.5V
Technical Specifications
Short description
Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Vendor
Vendor Name
Foundry, Node
TSMC 40nm uLP eFlash
Maturity
Pre-silicon
TSMC
Pre-Silicon:
40nm
LP
Related IPs
- TSMC 40nm ULP eFlash combo voltage regulator combining a high efficiency DC-DC for operation in normal mode and an ultra-low quiescent uLDO to supply AON domain during sleep mode
- ULP Bandgap Reference - Ultra Low Current (150nA) Silterra 0.18 um
- Linear Regulator, ultra low quiescent current for retention mode
- Linear regulator with ultra low quiescent current for retention applications
- Linear regulator with ultra low quiescent current for retention applications
- Linear Regulator, ultra low quiescent current for retention mode