Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Overview
Ultra low quiescent current LDO in TSMC 40nm ULP eFlash
Key Features
- Very low quiescent and leakage for Low-Power
- Can supply always-on very low load
- Supports wide input voltage range from 2.7V to 5.5V
Technical Specifications
Foundry, Node
TSMC 40nm uLP eFlash
Maturity
Pre-silicon
TSMC
Pre-Silicon:
40nm
LP
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