RF IP
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3.3V Capable GPIO on TSMC 28nm RF HPC+
- The 3.3V capable GPIO is an IP macro for on-chip integration. It is a 3.3V general purpose I/O built with a stack of 1.8V thick oxide MOS devices. It is controlled by 0.9V (core) signals.
- Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.
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1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
- The 1.2V Thin Gate GPIO is an IP macro for on-chip integration. It is a 1.2V general purpose I/O that does not rely on thick-gate devices. Only thin-gate, 0.9V capable core MOS devices are used in the design.
- Supported features include core isolation, programmable slew rate compensation, programmable drive strength, input/output enable, pull select and pull enable. Extra features such as programmable hysteresis can be supported upon request.
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Bluetooth Low Energy 6.0 Scalable RF IP
- The SB1001 Scalable RF Transceiver IP is designed to maximise performance per μW across the full range of BLE applications, enabling receiver power consumption as low as 3mW for medical devices, whilst delivering up to +10dBm transmit power when needed for industrial applications.
- It is optimised for applications such as BLE, 802.15.4 (Zigbee, Matter) and proprietary standards operating at 2.4GHz.
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Low Jitter RF PLL for Sub-1G RF IP Application - SMIC 55nm
- Low Jitter RF PLL for Sub-1G RF IP Application
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Wi-Fi 7(be) RF Transceiver IP in TSMC 22nm
- The Wi-Fi 7 (802.11be) RF transceiver IP, operating in 2.4GHz / 5GHz / 6GHz bands, is tailored for next-generation high-performance applications.
- This tri-band system delivers exceptional wireless communication capabilities with support for Wi-Fi 6/6E/n/g/b/a, enabling seamless connectivity across a wide frequency spectrum (5.925–7.125 GHz).
- With support for advanced 4096-QAM modulation, the IP is capable of ultra-high data throughput, making it an ideal solution for bandwidth-intensive applications requiring low latency, fast data rates, and robust connectivity.
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Ku-Band Phased Array Tx-FE in TSMC 180nm RF
- The TRV801TSM180RF IP is a Ku-Band (14GHz to 14.5GHz) Transmitter (Tx) in TSMC 180nm RF CMOS process technology.
- It integrates X+Y transmitter channels on the same die and its low power makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
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Ku-Band Phased Array Rx-FE in TSMC 180nm RF
- The TRV501TSM180RF IP is a Ku-Band (10.7GHz to 12.75GHz) Receiver (Rx) RFFE TSMC 180nm RF CMOS process technology.
- It integrates X+Y receiver channels on the same die and its low noise figure and wide baseband bandwidth makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
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mmWave 8x8 MIMO RF Front End V2
- Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
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mmWave 8x8 MIMO RF Front End V1
- Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
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Wi-Fi 6 (ax)+BLEv5.4+15.4 Dual Band RF IP for High-End Applications.
- Dual-band transceiver IP supporting IEEE802.11a/b/g/n/ac/ax.
- Full concurrent dual band operation.
- Supply current (high band or low band, 1x1 mode, typical)
- Bandwidth Support: 20/40/80 (high band) MHz channel