5nm IP
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178
IP
from 19 vendors
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10)
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TSMC 5nm UCIe-A 32G LP Die to Die Interface
- TSMC 5nm UCIe-A 32G LP Die to Die Interface
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PCIe 4.0 PHY on 5nm
- Low power consumption and small area
- Support 1-, 2- and 4- lane configurations
- Automatic built-in self-test (Loopback)
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PCIe 6.0 PHY on 5nm
- Low power consumption and small area
- Support 1-, 2- and 4- lane configurations
- Automatic built-in self-test (Loopback)
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HSSTP TX PHY 5nm Samsung Foundry
- Samsung Foundry 5nm (SF5A) CMOS device technology
- 1.8V±5%, 0.75V±5% power supply
- Fully supports ARM HSSTP v6.0
- Supports 1.5/3/6Gbps data rates
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PHY for PCIe 6.0 and CXL for TSMC 5nm FinFet
- DSP-based Long Reach (LR) equalization and clock data recovery (CDR) provide superior performance and reliability
- Low active and standby power consumption, supports L1 sub-states standby power management
- Extensive set of isolation, test modes, and loopbacks including APB and JTAG
- Supports lane aggregation and bifurcation
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112G-ELR PAM4 SerDes PHY - TSMC 5nm
- TSMC 5nm FinFET CMOS Process
- Power-optimized for ELR and LR links
- Integrated BIST capable of producing and checking PRBS
- 56-112Gbps PAM4 or 1-56Gbps NRZ data rates
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MIPI D-PHY TRx 5nm
- Samsung Foundry 5nm low power enhanced (LN11LPP) CMOS device technology
- 1.8V±5%, 1.2V±5%, 0.8/0.9V±5% power supply
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MIPI C-PHY TRx / MIPI D-PHY TRx Combo PHY 5nm
- Low power consumption, small area
- Supports both overdrive (0.85V) and normal (0.75V) power
- Support for various lane configurations
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MIPI C-PHY TRx / MIPI D-PHY TRx Combo PHY 5nm
- Samsung Foundry 5nm low power enhanced (LN05LPE) CMOS device technology
- 1.8V±5%, 1.2V±5%, 0.75/0.85V±5% power supply