Ultra-low standby current BGP

Key Features

  • Operating junction temperature: -40°C~+25°C~+125°C;
  • Analog power supply 2.0V ~5.0V;
  • Ultra-low power dissipation structure, as low as 80/160nA;
  • Shutdown current is lower than 5nA;
  • Two typical reference voltage are 0.9V and 0.7V;
  • Low temperature coefficient, as low as 0.08mV/°C
  • Provides some 20nA/40nA PMOS current mirrors to help customers biasing;
  • Area (No analog PADs, SMIC 55nm embedded-flash process)
  • Total:331um×227um?0.076mm2

Technical Specifications

Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven: 55nm G , 55nm LL
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Semiconductor IP