Multi-Standard Multi-Voltage Fail-Safe I/O in DB HiTek 110nm

Overview

A Specialized 1.2V to 3.3V Fail-Safe GPIO in Dongbu HiTek 110nm 11SB Pro- cess, with multiple protocol capabilties.

This silicon-proven Wirebond compatible library in Dongbu HiTek 110nm features a multi-voltage, multi-standard General Purpose Input Output with an Open-Drain Input Output capability, that targets the I2C standard. The library is built as a Fail- Safe I/O design. There is no poly-orientation for this library. The library features an Analog Mux, which allows for core direct access to the bondpad, either to drive externally a signal or receive a signal from the PAD. The I/O Library is compliant with standards regarding all 1.2V, 1.8V, and 3.3V operation. The library can support various standards, including I3C, I2C, SPI and QSPI. ESD targets are 2kV HMB and 500V CDM.

 Operating Conditions

Parameter Value
Devices 3.3V Thick & 1.2V Thin Oxides
BEOL 1P7M
VDDIO 1.2V, 1.8V or 3.V
VDD 1.2V
Temp -40C to 125C
ESD 2kV HBM & 500V CDM
I/O Cell Size 100x200um
Bondpad 70x70um

Cell Summary

  • DN_GPODIIC: An FS-GPIO/FS-ODIO with I2C targeted performance, and a broad selection of slew rate for the GPIO feature.
  • DN_GPOD: An FS-GPIO/FS-ODIO designed for high-speed, hard driving applications. No slew rate features.

Key Features

  •  Open-Drain Pull-up and Pull-down resistors
  •  Selectable Pull-up and Pull-down resistors
  •  Schmitt Trigger Input Reciever
  •  Selectable Drive Strengths (GPIO and ODIO modes) 
  •  Selectable Slew Rates (GPIO and ODIO modes)
  • Fail-Safe (I/O leaks zero current at pad when VDDIO is   powered down)
  • Analog Mux Feature
  • Power-down control
  • Wide   Capacitive   Load  Range:    10pF   to 75pF  GPIO,   300pF ODIO
  • Wide Slew Rate Select Ranges: 0.5pS to 100nS
     

Block Diagram

Multi-Standard Multi-Voltage Fail-Safe I/O in DB HiTek 110nm Block Diagram

Technical Specifications

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Semiconductor IP