Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k

Overview

Key Features

• REACH THE HIGHEST DENSITY
• Thanks to smart periphery design
• Typically up to 20% gain in density versus alternative HD-LP RAM depending on instance configuration
• Using Pushed Rules Foundry bitcell
• EXTEND BATTERY LIFE
• Designed with partitioned array to reach ultra low power consumption at 1.2 V +/-10% and 0.9 V +/-10%
• Support a couple of power saving modes: stand by and data retention mode
• Minimum data retention mode for ultra low leakage saving: 0.55 V +/-10% (optional)
• MAKE INTEGRATION EASIER
• MUX option enabling several performance tradeoffs and form factor
• Data range flexibility allows easy addition of bits for ECC purposes
• Address range flexibility allows easy addition of single rows for redundancy purposes
• Embedded extinction&retention switchs (ERS optional)
• ENABLE RIGHT ON FIRST PASS DESIGN
• Complete mismatch validation of the memory architecture taking in account local and global dispersion
• Extended validation for high coverage rate of the compiler
• DECREASE TIME TO MARKET
• Multi foundries support using the same architecture

Technical Specifications