Samsung 28nm FDSOI MIPI DPHY V1.1
Key Features
- Process: Samsung FDSOI 28nm 0.9V/1.8V, metal option TBD.
- Compliant to the MIPI D-PHY spec v1.1
- Data rate per lane: High-Speed mode 80M~1.5G bps, Low-Power mode 10Mbps
- Lane type:1 clock + 2 data, bi-directional
- Support Reverse Escape mode (High-speed reverse is not supported)
- On-chip differential 100? terminations with calibration
- Built-in self test function
- Supply voltage: 1.8V±10%, 0.8V±10%
- Junction temperature range: -40°C~25°C~125°C
Technical Specifications
Maturity
Silicon Proven
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