Samsung 28nm FDSOI 1.8v/1.0v APLL

Key Features

  • Process: Samsung 28nm FDSOI 1.0v1.8v process
  • Supply voltage: 1.62V<=AVDD<=1.98V, 0.9V<=DVDD(AVDD2)<=1.1V
  • Mos device: pfet, nfet, egpfet, egnfet, vncap, rpposab
  • Operating current:AVDD<4mA(2.4GHz)
  • Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Technical Specifications

Foundry, Node
Samsung 28nm FDSOI
Maturity
Silicon Proven
Samsung
Silicon Proven: 28nm FDS
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Semiconductor IP