RAR-eSR-qLR-OV-LB-LS-ref-[2.7-5.5]-[0.55-3.3].07e, as any Power Management Virtual Component designed by Dolphin Design, is readily retargetable toward any submicron CMOS process.
Applicable to automotive, industrial.
Designed for extended mission profile (aging report available)
Retention Alternating Regulator - High temperature (Grade 1, Tj=150°)
Overview
Key Features
- The retention Alternating Regulator (RAR-eSR-qLR-OV-LB-LS-ref-[2.7-5.5]-[0.55-3.3].07e) embeds two regulator Virtual Components called eSR-Tugela-OV-LB-Bu-ref-[2.7-5.5]-[0.55-3.3].06 and qLR-Aubrey-OV-ref-[2.7-5.5]-[0.55-3.3].05.
- Manages booting and transitions between embedded regulators.
- Enables high power and low power operating modes.
- Embedded power pads with ESD protection.
- Designed with standard 3.3 V and core transistors.
- Compliant with Maestro R1.1 (and later) (Patented solution to build Activity Control Units)
- Integrated Local Supply Monitoring (LSM)
- Embedded level-shifter with isolation capabilities
Technical Specifications
Foundry, Node
TSMC 40nm uLP eFlash
Maturity
Pre-silicon
TSMC
Pre-Silicon:
40nm
LP
Related IPs
- Retention Alternating Regulator - High temperature (Grade 1, Tj=150°)
- Buck Switching Inductor Regulator - High temperature (Grade 1, Tj=150°)
- Buck Switching Inductor Regulator - High temperature (Grade 1, Tj=150°)
- Buck Switching Inductor Regulator - High temperature (Grade 1, Tj=150°)
- Ultra-low power 32 kHz RC oscillator - High temperature (Grade 1, Tj=150°)
- Ultra low-power crystal-based 32 kHz clock generator - High temperature (Grade 1, Tj=150°)