Metal programmable ROM compiler - Non volitile memory optimized for low power - compiler range up to 256 k
Overview
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k
Key Features
- For nominal voltage characterization corner
- Power reduction features
- Up to 50% gain in dynamic power consumption compared to standard ROM
- Decrease of fabrication costs
- Via 1 programmable ROM
- 20% gain in density compared to standard ROM
- Ultra low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
- Easy Integration
- Depending on memory capacity up to 5 different MUX options can be selected
- High flexibility for address range and data range
- Compliance with TSMC IP 9000 qualification process
Technical Specifications
Maturity
Pre-silicon
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