Low-cap high-speed RF analog IO
Key Features
- Low-cap. high-speed RF analog IO, support >2GHz signal
- Cell Size (Width * height) 60um * 126um with DUP in-line bonding pads
- Work voltage: 1.1V/1.8V~3.3V power
- SMIC 0.040um Logic Salicide 1.1V/2.5V low leakage Process
- Suitable for 7, 8 and 9 layers application (single top metal, thick top matal)
- Suitable for 7, 8, 9 and 10 layers application (double top metal, thick top matel)
Technical Specifications
Foundry, Node
SMIC 40nm
Maturity
Silicon Proven
SMIC
Pre-Silicon:
40nm
LL
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