HBM2 Memory Controller

Overview

HBM2 Memory Controller

Key Features

  • Support Pseudo Channel mode with 64DQ per Pseudo Channel
  • Support DFI1:1
  • Support HBM Burst Length 4
  • Support 4 High or 8 High HBM Devices
  • Support only 1 AXI 4.0 ports with 128-bit data bus width for each Pseudo channel
  • Support only AXI burst type = INCR, AXI burst length = 8, AWSize/ARSIze = 3’h4 (128-bit), and AWAddr/ARAddr is 128-Byte aligned
  • Support only Parity Latency = 0 or 2
  • Support Read DBI and Write DBI features
  • Support Command/Address parity check feature
  • Support DQ parity check feature
  • Support both mode-1 and mode-2 DWORD remapping features
  • Support HBM ECC function
  • Support internal SRAM ECC function
  • Support AXI read interleaving
  • Consistent AXI read-after-write
  • Support software programmable mapping from AXI address to SID, Bank-Group, Bank, Row, Column bits for user specific applications
  • Support manual self-refresh and automatic self-refresh
  • Support manual power-down and automatic power-down
  • Support single bank refresh
  • Support auto precharge
  • Support memory BIST (Built In Self Test) function

Technical Specifications

Foundry, Node
TSMC
Maturity
Pre-silicon
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Semiconductor IP