GLOBALFOUNDRIES 28nm SLP 1.8v/1.0v SUBLVDSTX

Key Features

  • Process: GF 28nm SLP 1.0V/1.8V CMOS process
  • Supply voltage: 1.62V<=AV18_TX(AVDD)<=1.98V,0.9V<=AVDD2(DV10)<=1.1
  • Mos device type: egpfet, egnfet, pfet, nfet
  • Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Technical Specifications

Foundry, Node
GlobalFoundries 28nm SLP
Maturity
Pre-Silicon
GLOBALFOUNDRIES
Pre-Silicon: 28nm SLP
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Semiconductor IP