VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler optimized for GLOBALFOUNDRIES FDSOI 22nm process can flexibly generate memory blocks via a friendly GUI or shell commands. The compiler supports a comprehensive range of words and bits. While satisfying speed and power requirements, it has been optimized for area efficiency.
VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler uses thin metals up to metal5. Dummy bit cells are designed in with the intention to enhance reliability.
GLOBALFOUNDRIES 22nm High Density Single-Port SRAM Compiler
Overview
Key Features
- High Density
- Low Leakage
- Low Power
- High Speed
- Size Sensitive Self-Time Delay for Fast Access
- Automatic Power Down
- Write Mask Function
- More details, please go to below website to contact VeriSilicon location sales :http://www.verisilicon.com/en/ContactUs
Technical Specifications
Short description
GLOBALFOUNDRIES 22nm High Density Single-Port SRAM Compiler
Vendor
Vendor Name
Foundry, Node
GlobalFoundries, 22nm
Maturity
Silicon Proven
Related IPs
- Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
- Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
- Single Port SRAM compiler - Memory optimized for ultra high density and high speed - Dual Voltage - compiler range up to 640 k
- Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
- Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
- Single Port SRAM compiler - Memory optimized for ultra low leakage and high density - Dual Voltage - compiler range up to 640 k