Foundry sponsored - Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k

Overview

Key Features

• FOUNDRY SPONSORED
• HIGHEST DENSITY
• -Smart periphery design
• -Typically up to 20% gain in density versus alternative HD-LP RAM depending on instance configuration
• -Uses Pushed Rules Foundry bitcell
• EXTENDED BATTERY LIFE
• -Designed with partitioned array to reach ultra low power consumption from 1.2 V +/-10% downto 0.9 V +/-10%
• -Available power saving modes: stand-by mode and data retention mode
• -Minimum data retention mode for ultra low leakage savings: 0.55 V (optional)
• EASIEST INTEGRATION
• -MUX option enabling several performance trade-offs and form factors
• -Data range flexibility allows easy addition of bits for ECC purposes
• -Address range flexibility allows easy addition of single rows for redundancy purposes
• ENABLES RIGHT ON FIRST PASS DESIGN
• -Complete mismatch validation of the memory architecture taking into account local and global dispersion
• -Extended validation for a high coverage rate of the compiler

Technical Specifications