Baseband power amplifier with attenuator

Overview

PA consists of attenuator, 1-stage amplifier with tunable gain. Attenuator reduces output power by 1dB from 0 to 60 dB. The amplifier gain is adjustable in increments of 2 dB.

Key Features

  • TSMC 65 nm CRN65LP
  • Differential inputs, outputs
  • High frequency 2 – 100 MHz
  • Available attenuation range from 0 to 60 dB (step by 1 dB)
  • Power amplifier with high IM3
  • Maximum Output Power 14 dBm
  • Portable to other technologies (upon request)

Applications

  • PA signal processing

Deliverables

  • Schematic or NetList
  • Abstract model (.lef and .lib files)
  • Layout view (optional)
  • Behavioral model (Verilog)
  • Extracted view (optional)
  • GDSII
  • DRC, LVS, antenna report
  • Test bench with saved configurations (optional)
  • Documentation

Technical Specifications

Foundry, Node
TSMC CMOS 65 nm
Maturity
silicon proven
Availability
Now
TSMC
Silicon Proven: 65nm G
×
Semiconductor IP