PA consists of attenuator, 1-stage amplifier with tunable gain. Attenuator reduces output power by 1dB from 0 to 60 dB. The amplifier gain is adjustable in increments of 2 dB.
Baseband power amplifier with attenuator
Overview
Key Features
- TSMC 65 nm CRN65LP
- Differential inputs, outputs
- High frequency 2 – 100 MHz
- Available attenuation range from 0 to 60 dB (step by 1 dB)
- Power amplifier with high IM3
- Maximum Output Power 14 dBm
- Portable to other technologies (upon request)
Block Diagram
Applications
- PA signal processing
Deliverables
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Technical Specifications
Foundry, Node
TSMC CMOS 65 nm
Maturity
silicon proven
Availability
Now
TSMC
Silicon Proven:
65nm
G