The WEA05114BG45G is a high precision band gap reference voltage that provides a 500 mV and a 1.14 V output from inputs between 1.8 V and 3.0 V. It is a Bipolar style Bandgap based on SOI Forward Biased Diodes. The SOI Diodes are not tied to the substrate, in this way the circuit simultaneously provides PTAT, CTAT and is constant with temperature currents. It is specified over the −40°C to +120°C temperature range.
Bandgap Voltage Reference 500mV/1.14V High Precision
Overview
Key Features
- High Voltage operation
- Supply Voltage Range: 1.8V to 3.0V
- Temperature Range: -40°C to +120°C
- PTAT current: 1.65 uA to 2.45 uA
- PTAT Slope : 0.3 %
- Untrimmed Constant Current: 200 ppm/°C
- Untrimmed Constant Voltage : 25 ppm/0C for 500mV 32 ppm/0C for 1.14V
- PSRR at 1MHz: -17.94dB for 500.00mV -25.4dB for 1.14V
- Dissipation: 19uA
- Area: 250umx90um
Block Diagram
Technical Specifications
Foundry, Node
GLOBALFOUNDRIES, 45RFSOI
Maturity
Silicon Proven
Availability
Silicon proven
GLOBALFOUNDRIES
Pre-Silicon:
45nm