Active frequency doubler, designed for use in the LO Path after VCO to double up the LO frequency

Overview

RFDBL03C is an active frequency doubler, designed for use in the LO Path after VCO to double up the LO frequency within the IC to feed in and drive the mixer. The design utilizes active balun in push configuration and balanced amplifier using 0.1um GaAs pHEMT with high pass matching to attain good fundamental suppression, conversion gain of 1.97 dB at 0 dBm input drive power and good input and output VSWRs. The technology used to design doubler is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

  • Output Frequency: 15.4 - 16.5 GHz
  • Input Frequency: 7.71 - 8.25 GHz
  • Input Drive Level: 0dBm(NOMINAL)
  • Output Power: -24.15 dBm
  • Conversion Gain: 1.97dB
  • Die Size: 1.15 mm to 1.36 mm

Benefits

  • Good conversion gain
  • Good fundamental suppression
  • Good input and output VSWRs
  • Low cost
  • Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Active frequency doubler, designed for use in the LO Path after VCO to double up the LO frequency Block Diagram

Applications

  • Satellite Communication
  • Point to point communication system
  • Backhaul application

Deliverables

  • Schematic and Netlist
  • Abstract Model (.lib file)
  • Layout View (Optional)
  • Behavioral model (Circuit & EM simulation)
  • Extracted View (Optional)
  • GDSII
  • DRC, LVS, Antenna report
  • Test bench with saved configuration (Optional)
  • Documentation

Technical Specifications

Foundry, Node
Win Semiconductor, 100 nm GaAs pHEMT process
Maturity
IC is fabricated and tested.
Availability
Now
×
Semiconductor IP