8 track thick oxide standard cell library at TSMC 130 - low leakage and direct battery connection (operating voltages from 1.08 V to 3.63 V)
Overview
TSMC 130 G, SESAME BIV, a new thick oxyde based standard cell library for ultra low leakage logic design and/or direct battery connection through the use of a patented flip flop.
Key Features
- Easy creation of ultra low leakage islets: reduce leakage up to 1000 times at 180 nm
- Power-off or even avoid a regulator thanks to direct battery or pad interface
Technical Specifications
Maturity
Pre-silicon
TSMC
Pre-Silicon:
130nm
G
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