The OT0210bj is a regulated low power crystal oscillator for the TSMC 0.18µ CMOS processes. It is designed to operate with standard AT cut crystals. This cell does not include primary ESD protection and is designed to be used with standard ESD pads. Current adjustment is provided to optimize power and accommodate crystal characteristics over the frequency range.
Also available in UMC 130nm, and VIS 150nm
5MHz-35MHz Low Power Crystal Oscillator
Overview
Key Features
- 4MHz-35MHz Frequency range.
- No external bias or limit resistors required.
- Current optimization for best power at frequency.
- Amplitude control loop.
- The OSCI pad input can be used as a CMOS input for test.
- Uses single 1.8V supply.
- Enable/power down provision.
- Service includes simulation with vendors crystal or resonator models.
Benefits
- Wide crystal range.
- Controllable max crystal current.
- Low power. Oscillator amplitude based current loop ensures minimum power.
- Low cost. Silicon proven multi-use license available at $8K.
Block Diagram
Applications
- Low power crystal clocked systems.
Deliverables
- GDS layout.
- Verilog model.
- LVS netlist.
- Basic SPICE testbench. Allows for verification of basic function.
- Integration notes, and integration consulting support.
- Test implementation notes.
Technical Specifications
Foundry, Node
TSMC 180nm, UMC 130nm, VIS 150nm
Maturity
Silicon proven
Availability
Now
TSMC
In Production:
180nm
Silicon Proven: 180nm , 180nm G , 180nm LP
Silicon Proven: 180nm , 180nm G , 180nm LP
UMC
In Production:
130nm
Silicon Proven: 130nm
Silicon Proven: 130nm
VIS
Pre-Silicon:
150nm
Silicon Proven: 150nm
Silicon Proven: 150nm
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