-45 … +85°C Temperature sensor

Overview

180TSMC_TS_01 consists of built-in 10-bit R-2R DAC, diode and own reference voltage former. When requested, controller performs conversion of diode voltage level, which depends on temperature linearly. After conversion is done it sets “ready” flag to “1” and outputs 10-bit code. Die temperature is calculated with the following expression: Temp = (code-407)*0.625. The conversion time is 640 us. With small size, usability and low current consumption, this device is ideal for use in controlling of the die temperature.

Key Features

TSMC SiGe 0.18 um
Operating temperature range -45 …+85 ºC
Built-in 10-bit R-2R DAC
Wide voltage range 2.8 … 3.6 V
Low consumption 58 uA
Small area
No external components required
Portable to other technologies (upon request)

Block Diagram

Applications

On chip temperature measurement
Pseudostatic analog digitalization
Sensitive analog circuit
Navigation receivers
High clock digital VLSI

Deliverables

Schematic or NetList
Abstract model (.lef and .lib files)
Layout view (optional)
Behavioral model (Verilog)
Extracted view (optional)
GDSII
DRC, LVS, antenna report
Test bench with saved configurations (optional)
Documentation

Technical Specifications

Foundry, Node

TSMC SiGe 180 nm

Maturity

silicon proven

Availability

Now

TSMC

Silicon Proven: 180nm

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