2Gbps Low Power D2D Interface

Overview

Custom die-to-die interface in 12/16nm process technology. The I/O cells are defined as TX only, and RX only and have two modes of operation, standard full rail-to-rail swing, or a custom low-noise pseudo-differential interface. RX cells have a weak pull-down feature.

Key Features

  • Core Device: 0.8V
  • I/O Device: 1.8V Standard
  • Core: Uses SVT only
  • BEOL: M8 and below
  • PAD: Flipchip/Die to Die packaging only, no wire-bond option.
  • Cell Dimension: 50um x 28.06um
  • VDD: 0.8V±10%, 0.7V/0.65V
  • Temperature: -40C to 125C
  • Operational Bit Rate: 2GBps per signal (MAX is 3.5GBps over corners)
  • ESD: ESD testing of the I/O will never occur directly, but we need to sufficiently mitigate die-to-die CDM stresses and assembly issues.

Deliverables

  • Verilog Models for all I/O, behavioral, and stubs.
  • LEF's
  • CDL netlists for DRC and LVS
  • GDS
  • IBIS
  • Liberty TIming Models
  • User Guide and Documentation

Technical Specifications

Foundry, Node
12nm, 16nm
Maturity
Silicon-Proven
Availability
Immediate
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Semiconductor IP