065TSMC_LVDS_10 is LVDS receiver with rail to rail input range. EN_T enables 100 Ohm internal resistor. The CAL_T<1:0> adjusts 100 Ohm internal resistor, the design target is to compensate the resistance deviation. The VREF12 is input 1.2 V voltage reference. Pin IREF_RX to get current 20 uA reference from receiver bias. INP and INN are complementary input to connect to the bonding pads. This LVDS receiver does not employ hysteresis, and therefore does not comply with the hysteresis requirement of the TIA and IEEE standards for LVDS differential signaling at the specified rates.
The block is designed on TSMC CMOS 65 nm technology.
2 Gbps Rail to Rail LVDS receiver
Overview
Key Features
- TSMC CMOS 65 nm
- 1.2 V CMOS input and output logic signals
- 2 Gbps (DDR MODE) switching rates
- Conforms to TIA and IEEE standards without hysteresis
- Rail to rail input range
- Optimized for pad-limited layout design
- Portable to other technologies (upon request)
Applications
- Point-to-point data receiver
- Multidrop buses
- Clock distribution
- Backplane receiver
- Backplane data receiver
- Cable data receiver
Deliverables
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Technical Specifications
Foundry, Node
TSMC CMOS 65 nm
Maturity
Silicon proven
Availability
Now
TSMC
Pre-Silicon:
65nm
G
Silicon Proven: 65nm G
Silicon Proven: 65nm G