A high efficiency CMOS 2 stage Low Noise Amplifier designed on 0.18µm SiGe BiCMOS process. The device is designed for use in the 802.11b/g and WLAN MIMO system.
1.7GHz-2.7GHz Two Stage Low Noise Amplifier
Overview
Key Features
- Frequency range : 1.7 to 2.7 GHz
- Supply Voltage/Current : ±1.8V/18.8mA
- Noise Figure : as low as 1.3dB
- Die size: 0.75mm by 0.45mm.
Technical Specifications
Foundry, Node
0.18µm SiGe BiCMOS process