130GF_RECT_01 intended for use in Bluetooth Low Energy applications. IP derives power from an RF electromagnetic field, which is received and rectified. The rectified voltage can be used to power various units. At the output with the rectifier is a parallel DC Limiter, which drains (shunts to the ground) excess energy (in the form of current) in case BLE_RECT voltage exceeds limiter clamping voltage. An ESD protection block is located at the rectifier input.
0.8 to 2.5GHz full wave rectifier with ESD protection
Overview
Key Features
- GF 130nm Embedded EEPROM technology process
- Input voltage limit with up to 20mA shunt capability
- Operation carrier frequency from 800MHz to 2.5GHz
- Input power range from 0dBm to +20dBm
- Reverse current protection
- Small area 0.048mm2
Benefits
- Reverse current protection
- Small area 0.048mm2
Block Diagram
Applications
- Access control systems
- RFID systems, smart cards
Deliverables
- Datasheet
- Layout View (GDSII)
- Evaluation kit based on packaged IC
- Characterization Report
- Behavioral Model
- SPICE netlist (.cdl)
- Integration Support
Technical Specifications
Foundry, Node
Global Foundries Embedded EEPROM 0.13 um
Maturity
pre-silicon verification
Availability
Now
GLOBALFOUNDRIES
Pre-Silicon:
130nm
Related IPs
- 6Mhz to 5.8Ghz wideband half and full wave rectifier
- 0.1 to 25 MHz Phase-frequency detector with charge pump
- 1 to 200 MHz 3rd order low-pass filter with frequency adjustment system
- 15 to 2780 kHz amplifier with band-pass filter
- RF I/O Pad Set and Discrete RF ESD Protection Components
- 0.8 to 25 MHz Intermediate-frequency amplifier