ARM 1176 in IBM SOI process demonstrates a cell-based flow
For several years it has been clear that SoI processes have a more favorable speed vs. voltage characteristic than comparable-node bulk silicon processes. This advantage can mean either lower operating voltage at a given speed---and thus lower power—or higher performance at a given voltage. And the presence of vast quantities of both the Xbox 360 and the PlayStation-3 should eliminate any question about volume manufacture, at least from IBM. So why is SoI still so rarely used?
The normal answer is the lack of design infrastructure. Early on, most SoI designs were at the high-performance fringe, and so people rightly associated SoI with custom design and highly-skilled teams. It would require new device models, new libraries, and new tools to make SoI work in a normal cell-based RTL flow, this reasoning said.
To read the full article, click here
Related Semiconductor IP
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1.22V/1uA Reference voltage and current source
- 1.2V SLVS Transceiver in UMC 110nm
- Neuromorphic Processor IP
- Lossless & Lossy Frame Compression IP
Related Blogs
- SOI need a large IP Ecosystem, 100% Reliable Novocell NVM IP is now part of IBM SOI 32nm ecosystem
- TSMC vs GlobalFoundries vs IBM
- Bringing MEMS and asynchronous logic into an SoC design flow
- TSMC vs GlobalFoundries IBM Samsung
Latest Blogs
- MIPS P8700 RISC-V Processor for Advanced Functional Safety Systems
- Boost SoC Flexibility: 4 Design Tips for Memory Subsystems with Combo DDR3/4 Interfaces
- High Bandwidth Memory Evolution from First Generation HBM to the Latest HBM4
- Keeping Pace with CXL Specification Revisions
- Silicon-proven LVTS for 2nm: a new era of accuracy and integration in thermal monitoring