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Compare 1,014 IP from 118 vendors (1 - 10)
  • Low Jitter RF PLL for Sub-1G RF IP Application - SMIC 55nm
    • Low Jitter RF PLL for Sub-1G RF IP Application
  • Wi-Fi 7(be) RF Transceiver IP in TSMC 22nm
    • The Wi-Fi 7 (802.11be) RF transceiver IP, operating in 2.4GHz / 5GHz / 6GHz bands, is tailored for next-generation high-performance applications.
    • This tri-band system delivers exceptional wireless communication capabilities with support for Wi-Fi 6/6E/n/g/b/a, enabling seamless connectivity across a wide frequency spectrum (5.925–7.125 GHz).
    • With support for advanced 4096-QAM modulation, the IP is capable of ultra-high data throughput, making it an ideal solution for bandwidth-intensive applications requiring low latency, fast data rates, and robust connectivity.
  • Ku-Band Phased Array Tx-FE in TSMC 180nm RF
    • The TRV801TSM180RF IP is a Ku-Band (14GHz to 14.5GHz) Transmitter (Tx) in TSMC 180nm RF CMOS process technology.
    • It integrates X+Y transmitter channels on the same die and its low power makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Tx-FE in TSMC 180nm RF
  • Ku-Band Phased Array Rx-FE in TSMC 180nm RF
    • The TRV501TSM180RF IP is a Ku-Band (10.7GHz to 12.75GHz) Receiver (Rx) RFFE TSMC 180nm RF CMOS process technology.
    • It integrates X+Y receiver channels on the same die and its low noise figure and wide baseband bandwidth makes it especially suitable for use in high-throughput modular digital Phased-Array Antenna products for mobile/tethered satellite communication applications.
    Block Diagram -- Ku-Band Phased Array Rx-FE in TSMC 180nm RF
  • mmWave 8x8 MIMO RF Front End V2
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V2
  • mmWave 8x8 MIMO RF Front End V1
    • Advanced mmWave 8x8 MIMO RF front-end silicon optimized for sophisticated wireless communication and beamforming.
    Block Diagram -- mmWave 8x8 MIMO RF Front End V1
  • Wi-Fi 6 (ax)+BLEv5.4+15.4 Dual Band RF IP for High-End Applications.
    • Dual-band transceiver IP supporting IEEE802.11a/b/g/n/ac/ax.
    • Full concurrent dual band operation.
    • Supply current (high band or low band, 1x1 mode, typical)
    • Bandwidth Support: 20/40/80 (high band) MHz channel
  • RF ESD library in TSMC 55nm LP
    • RF ESD cells in TSMC 55nm LP targetting low-capacitance ESD protection.
    • This library is a production-quality, silicon-proven ESD library in TSMC 55nm.
    • The library does not have general ESD architecture as it is not a full I/O, but rather is a collection of standalone ESD cells that target low-capacitance RF ESD protection.
  • 50mA Capless High PSRR Regulator LDO Regulator for RF and Analog Applications in Samsung 8nm
    • No input or output capacitor required
    • • Input voltage from 1.71V to 2.0V
    • • Programmable output voltage of 0.7V,
    • 0.75V, 0.8V.
  • 10mA, Capless High PSRR LDO Regulator for RF and Analog Applications in TSMC 28nm
    • No input or output capacitor required
    • Input voltage from 1.62V to 2.0V
    • Programmable output voltage of 0.9V, 1V, 1.2V, 1.3V
    • 10mA highly regulated output current
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Semiconductor IP