FDSOI 28nm Memory IP
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Samsung 28nm Low Voltage Single-Port SRAM Compiler
- Low Voltage
- Low Power
- High Density
- High Speed
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Samsung 28nm Low Power Single-Port SRAM Compiler
- Low Power
- Low Leakage
- High Density
- High Speed
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ReRAM NVM in SkyWater 130nm
- Technology: 130nm, SkyWater S130
- Mask Adder: 2
- Supply Voltage: 1.8V Read, 1.8V+3.3/3.6V Program
- Read Access Time: <20nsec
- Operation Temp.: -40°C - 125°C (can be extended to -55°C)
- Capacity: 256 Kbit (can be customized for 128Kbit - 2Mbit)
- Data Bus Width (Read): 32-bit (can be customized to 16-bit to 128-bit)
