Eeprom IP

Synopsys MTP EEPROM Non-Volatile Memory (NVM) IP is a Multi-Time Programmable (MTP) block developed in standard logic CMOS processes
Supporting up to 8-Kbit configurations and up to 400,000 write cycles with program/erase and read operations up to 125°C, the compact NVM IP enables true electrically erasable programmable read only memory (EEPROM) performance without requiring additional masks for processing steps
Delivered as a hard IP block, the low-power, reprogrammable Synopsys MTP EEPROM NVM IP operates from the core supply and includes all the necessary support and control circuitry, including all high-voltage generation and distribution required for programming
Synopsys MTP EEPROM NVM IP is available in advanced, high voltage, BCD, and analog mixed-signal processes.

Synopsys MTP EEPROM Non-Volatile Memory (NVM) IP is a Multi-Time Programmable (MTP) block developed in standard logic CMOS processes
Supporting up to 8-Kbit configurations and up to 400,000 write cycles with program/erase and read operations up to 125°C, the compact NVM IP enables true electrically erasable programmable read only memory (EEPROM) performance without requiring additional masks for processing steps
Delivered as a hard IP block, the low-power, reprogrammable Synopsys MTP EEPROM NVM IP operates from the core supply and includes all the necessary support and control circuitry, including all high-voltage generation and distribution required for programming
Synopsys MTP EEPROM NVM IP is available in advanced, high voltage, BCD, and analog mixed-signal processes.

Synopsys MTP EEPROM Non-Volatile Memory (NVM) IP is a Multi-Time Programmable (MTP) block developed in standard logic CMOS processes
Supporting up to 8-Kbit configurations and up to 400,000 write cycles with program/erase and read operations up to 125°C, the compact NVM IP enables true electrically erasable programmable read only memory (EEPROM) performance without requiring additional masks for processing steps
Delivered as a hard IP block, the low-power, reprogrammable Synopsys MTP EEPROM NVM IP operates from the core supply and includes all the necessary support and control circuitry, including all high-voltage generation and distribution required for programming
Synopsys MTP EEPROM NVM IP is available in advanced, high voltage, BCD, and analog mixed-signal processes.

Synopsys MTP EEPROM Non-Volatile Memory (NVM) IP is a Multi-Time Programmable (MTP) block developed in standard logic CMOS processes
Supporting up to 8-Kbit configurations and up to 400,000 write cycles with program/erase and read operations up to 125°C, the compact NVM IP enables true electrically erasable programmable read only memory (EEPROM) performance without requiring additional masks for processing steps
Delivered as a hard IP block, the low-power, reprogrammable Synopsys MTP EEPROM NVM IP operates from the core supply and includes all the necessary support and control circuitry, including all high-voltage generation and distribution required for programming
Synopsys MTP EEPROM NVM IP is available in advanced, high voltage, BCD, and analog mixed-signal processes.

The IP block provides the physical layer implementation of ISO 14443 interface. In particular, it includes the necessary functional devices for receiving data on the connected antenna, for the response load modulation, received and transmitted data (de)framing and parallel interface to external CPU.
This IP also can be used for adding NFC functionality to mobile devices and other applications to perform high-level RFID protocol tasks.

180SMIC_RFID_EPCGen2_01 IP is intended for use in passive UHF transponder applications.
IP derives its operating power from an RF electromagnetic field generated by a reader, which is received and rectified by the IP.
The IP tag sends the answer back to the reader using a backscatter modulation technique.

130GF_RFID_EPCGen2_01 IP is intended for use in passive UHF transponder applications.
IP derives its operating power from an RF electromagnetic field generated by a reader, which is received and rectified by the IP.
The tag IP sends the answer back to the reader using a backscatter modulation technique.

SMIC EEPROM CMOS 0.18 um
High density of memory cells
Writing and erasing data by one high-voltage pulse
Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)

Global Foundries Embedded EEPROM 0.13 um
1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
High density of memory cells
Writing and erasing data by one high-voltage pulse