A TSMC 22nm Wirebond / Flipchip I/O library with dynamically switchabe 1.8V/3.3V GPIO, 3.3V I2C ODIO, 3.3V Analog Cell and associated ESD.
This is an ultra-low leakage library. The GPIO has a worst-case leakage of only 425nA. It works with a wide VDDIO supply range from 1.8V to 3.3V during system operation without the need for the customer to manually switch between high and low-voltage modes. The GPIO cell set can be configured as input or output and has an internal 50K ohm pull-up or pull-down resistor. It has a sleep function which - when enabled - puts the I/O into an ultra-low power state and latches the I/O in the previous state. Cells for I/O, core power, and ground with built-in ESD circuitry are included. A power-on-control circuit is integrated into an available VDDIO cell. The GPIO can do TX and RX up to 150MHz. ESD targets are 2KV HBM / 500V CDM with 2KV IEC 61000-4-2 system stress capability.
Operating Conditions
| Parameter | Value |
| VDDIO | 1.8V - 3.3V |
| Core VDD | 0.9V |
| Temperature | -40C to 125C |
| ESD | 2kV HBM & 500V CDM |
Cell Size and Metal Stack
| Cell Size | Metal Stack |
| 65um x 80um | 1P7M_4x1Z1U |
Cell Summary
| Cell Type | Feature |
| Supply/ESD | 1.8V - 3.3V; GND |
| GPIO | 150-300MHz (supply dependent |
ESD Summary
- Complies with xSPI266
- Complies with xSPI333 when VDDIO = 2.5V
- Complies with xSPI400 when VDDIO = 3.3V
