RAM IP for TSMC
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22
RAM IP
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TSMC
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10)
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Ultra Low Power Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
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Ultra Low Voltage Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Ultra Low Power Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
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Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Ultra Low Voltage Embedded SRAM - TSMC 40ULP
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Memory Compilers
- Dolphin provides a wide range of Memory Compilers and Specialty Memory (ROM, Multi Port RF, CAM, etc.) optimized to meet even the most demanding requirements for high performance, high density and low power.
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Memory Compiler in TSMC (16nm,22nm,28nm,40nm,55nm,90BCD+,110nm,152nm,180BCD)
- Synchronous read/write operation
- Low leakage current and lower operation power consumption
- Minimum metal layer requirement: 4/3 metal layers
- High density layout structure and small area design
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High-Density eMRAM Compiler TSMC 22ULL
- eMRAM compiler enabling low-power designs requiring high memory capacity
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GCRAM, the highest-density on-chip embedded memory in standard CMOS
- High-density bitcell offering up-to 2X area reduction over high-density 6T SRAM.
- Full logic compatibility with standard CMOS, no additional process steps or cost.
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Single Port SRAM compiler - Memory optimized for ultra high density and low power - compiler range up to 576 k
- Configuration
- SVT transistors for memory periphery
- HD HVT Pushed rule bit cell from foundry
- Smart periphery design