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Memory & Libraries IP for TSMC

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Compare 955 Memory & Libraries IP for TSMC from 31 vendors (1 - 10)
  • 3.3V general purpose I/O for 28nm CMOS
    • Enable higher voltage operation, beyond the foundry IO levels
    • Easily replace existing I/O cells
    • Integrated scalable ESD protection
    • Bias circuit can be shared with multiple I/Os
    Block Diagram -- 3.3V general purpose I/O for 28nm CMOS
  • Library of LVDS IOs cells for TSMC 65LP
    • TSMC 65 LP
    • 2.5V/1.2V IO/Core transistors
    • Fully compliant with TIA/EIA-644-A-2001
    Block Diagram -- Library of LVDS IOs cells for TSMC 65LP
  • Library of LVDS IOs cells for TSMC 40LP
    • TSMC 40 LP
    • 2.5V/1.1V IO/Core transistors
    • Fully compliant with TIA/EIA-644-A-2001
    Block Diagram -- Library of LVDS IOs cells for TSMC 40LP
  • eTCAM (Embedded Ternary Content Addressable Memory IP
    • One cycle operation latency (without priority encoder)
    • Valid Bit per entry to reduce power
    • Valid Bit reset in one cycle support
    Block Diagram -- eTCAM (Embedded Ternary Content Addressable Memory IP
  • eTCAM (Embedded Ternary Content Addressable Memory IP
    • One cycle operation latency (without priority encoder)
    • Valid Bit per entry to reduce power
    • Valid Bit reset in one cycle support
    • Mask input option for bit-write and masked search key
    Block Diagram -- eTCAM (Embedded Ternary Content Addressable Memory IP
  • Ultra Low Power Embedded SRAM - TSMC 22ULL
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
    • Configurable mux factor sets column length and overall aspect ratio
    • Bit Line Voltage control eliminates potential low operating voltages issues
    Block Diagram -- Ultra Low Power Embedded SRAM - TSMC 22ULL
  • Ultra Low Voltage Embedded SRAM - TSMC 22ULL
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 22ULL
  • Ultra Low Power Embedded SRAM - TSMC 28HPC+
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
    • Configurable mux factor sets column length and overall aspect ratio
    • Bit Line Voltage control eliminates potential low operating voltages issues
    Block Diagram -- Ultra Low Power Embedded SRAM - TSMC 28HPC+
  • Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
  • Ultra Low Voltage Embedded SRAM - TSMC 40ULP
    • Single port, single voltage rail synchronous SRAM
    • Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
    • ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
    • Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
    Block Diagram -- Ultra Low Voltage Embedded SRAM - TSMC 40ULP
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