A/D Converter (ADC) IP for TSMC

Compare 11 A/D Converter (ADC) IP for TSMC from 5 vendors (1 - 10)

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16nm

PDM-to-PCM Conversion with AMBA Interface
- SNR 100dB; THD -100dB
- PDM (pulse-density modulated) Input
- PCM (pulse-code modulated) output
12-bit 12-Gsps ADC
- 12-Gsps sample rate (extendable to 24-Gsps)
- 12 bit resolution (10-bit option)
- >4X SMALLER than competing solutions
- >2X LOWER POWER than competing solutions, ~10mW/Gsps
20GSa/s 12-Bit Analogue-to-Digital Converter (ADC)
- TSMC: 12/16nm CMOS FinFET
- Resolution: 12-bit
- Sampling rate: 20GSa/s
- Power supplies: 1.8V, 1.2V, 1V and 0.8V
12-bit, 9Gsps ADC
- The ODT-ADS-12B9G-16 is an ultra-high-performance time-interleaved ADC designed in a 16nm CMOS process.
- This 12-bit, 9GSPS ADC supports input signals up to 3.0 GHz and features a differential full-scale range of 0.8Vpp and excellent static and dynamic performance.
12 bit, 200 MSPS ADC
- Ultra high-performance low-power ADC
- Integrated input buffer
- 12-bit ADC resolution
- Sampling rate of 200MSPS
10 bit, 2.5 GSPS ADC
- Ultra low-power, high-performance ADC
- 10-bit ADC resolution
- Sampling rate up to 2.5GSPS
- Fully differential operation
12-bit, 6 GSPS High Performance RF ADC in 16nm CMOS
- 12-bit resolution, sampling rate up to 6 GSPS
- Fully differential operation, fully specified from -40C to 125C
- High linearity and low noise
12-bit, 2 GSPS High Performance ADC in 16nm CMOS
- 12-bit resolution, sampling rate up to 2 GSPS
- Fully differential operation, fully specified from -40C to 125C
- Ultra low power dissipation
- High linearity and low noise
8-bit >100GSa/s Ultra-high-speed ADC in 16nm TSMC CMOS
- Process technology: 16nm
- Resolution: 8 bit
- Sampling rate: 60 – 103 GSa/s (H variant)
8-bit <=51GSa/s Ultra-high-speed ADC in 16nm TSMC CMOS
- ADC with ultra-high sampling rate, low power, high BW, high ENOB
- Process technology: 16nm
- Resolution: 8 bit
- Sampling rate: 30– 51 GSa/s (H variant)