Embedded Memories IP for SMIC

Compare 202 Embedded Memories IP for SMIC from 7 vendors (1 - 10)

1Kbyte EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
1024-bit EEPROM IP with configuration 32p2w16bit
- SMIC EEPROM CMOS 0.18 um
- 1024-bite of available memory 16(bit per word) x 2(words per page) x 32(pages) bit
- High density of memory cells
1Kbyte Embedded EEPROM with configuration 64p8w16bit
- SMIC EEPROM CMOS 0.18 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
512-bit EEPROM with configuration 16p1w32bit
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
1Kbyte EEPROM (NTLab)
- SMIC EEPROM CMOS 0.18 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
512-bit EEPROM (NTLab)
- SMIC EEPROM CMOS 0.18 um
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
- Programming and erase time – 2 ms
CSMC 0.13um Single-Port/Dual-Port SRAM, Single-Port/Two-Port Register File and Via1 ROM Compiler
- High Density
- High Speed
- Size Sensitive Self-Time Delay for Fast Access
- Automatic Power Down
Embedded OTP (One-Time Programmable) IP, 256x32 bits for 0.9V/2.5V ULP
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
Embedded OTP (One-Time Programmable) IP, 512x16 bits for 1.8V/5V BCDA
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with UV illumination
- High yield performance
- Small IP size
Embedded OTP (One-Time Programmable) IP, 512x8 bits for 5V V3E_BCD
- Logic Embedded IP
- Programming with channel hot electron injection, erasing with UV illumination
- High yield performance
- Small IP size