Embedded Memories IP for Samsung

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Compare 3 Embedded Memories IP for Samsung from 2 vendors (1 - 3)

Ultra Low Power Embedded SRAM - Samsung 28FDSOI
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
Samsung 28nm Low Power Single-Port SRAM Compiler
- Low Power
- Low Leakage
- High Density
- High Speed
Samsung 28nm Low Voltage Single-Port SRAM Compiler
- Low Voltage
- Low Power
- High Density
- High Speed