Embedded Memories IP for Samsung
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Embedded Memories IP
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6
Embedded Memories IP
for Samsung
from 5 vendors
(1
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6)
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LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
- Compliant for JEDEC standards for LPDDR5X/5/4X/4 with PHY standards
- DFI 5.1 specification PHY Interface Compliant
- Support up to 4 ranks
- x16 and x32 channel support
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Ultra Low Power Embedded SRAM - Samsung 28FDSOI
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line – subdividing the array into columns/ rows, banks and local blocks.
- Configurable mux factor sets column length and overall aspect ratio
- Bit Line Voltage control eliminates potential low operating voltages issues
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OTP One Time Programmable IP Samsung 90CIS
- Small IP Size
- High reliability
- Radiation hardening
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Embedded OTP (One-Time Programmable) IP, 4Kx32 bits for 0.9V/1.8V FDS
- Logic Embedded IP
- Programming NeoFuse cell by using quantum tunneling mechanism
- High yield performance
- Small IP size
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Samsung 28nm Low Voltage Single-Port SRAM Compiler
- Low Voltage
- Low Power
- High Density
- High Speed
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Samsung 28nm Low Power Single-Port SRAM Compiler
- Low Power
- Low Leakage
- High Density
- High Speed