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Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
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Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
- Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
- Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
- Mos device: pfet, nfet, egpfet, egnfet
- Operating current:AVDD18<24mA AVDD10<2mA
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Frequency Synthesizer
- Smallest core size: 0.01mm2
- -40 - 125C
- Max 6GHz output
- Integer mode and fractional-N mode