EEPROM IP for GLOBALFOUNDRIES
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3.6Kbit EEPROM IP with configuration 28p8w16bit
- 130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages of 8 words by 16 bit with single-bit output data and parallel write data.
- Data programming in EEPROM consists of 2 consecutive phases - erasing and writing.
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1KByte EEPROM IP with configuration 66p16w8bit
- Global Foundries Embedded EEPROM 0.13 um
- 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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2048bits EEPROM with configuration 16p8w16bit
- GlobalFoundries Embedded EEPROM 0.13 um
- 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
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1Kbyte EEPROM IP with configuration 64p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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36Kbyte EEPROM IP with configuration 288p32w32bit
- Global Foundries Embedded EEPROM 0.13 um
- 36Kbyte of available memory 32(bit per word) x 32(words per page) x 288(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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3.6Kbit EEPROM IP with configuration 28p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 3.6Kbit of available memory 16(bit per word) × 8(words per page) × 28(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
