36Kbyte EEPROM IP with configuration 288p32w32bit

Overview

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 36Kbyte (32(bit per word) x 32(words per page) x 288(pages)) with parallel write/read data in one word. Write EEPROM page data comes to input DI<31:0> and write process execute if signal WR = "1". Data DI<31:0>, page address ADR_P<8:0>, word address in page ADR_W<4:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the READY = "1" flag is set. Data reading is carried out by specifying the page address ADR_P<8:0> and the address of the word in the page ADR_W<4:0>. After applying the reading strobe, the DO<31:0> signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

Key Features

  • Global Foundries Embedded EEPROM 0.13 um
  • 36Kbyte of available memory 32(bit per word) x 32(words per page) x 288(pages) bit
  • High density of memory cells
  • Writing and erasing data by one high-voltage pulse
  • Programming and erase time – 2 ms each
  • Page writes allowed
  • Data retention and endurance cycles determined by GF technology
  • Low power dissipation in standby and active mode

Applications

  • Access control systems
  • Radio-frequency identification systems, smart cards
  • Electronic devices with battery power
  • Chip serial ID and chip safety

Deliverables

  • Schematic in electronic format (.netlist file)
  • Layout in GDSII electronic format (.gds file)
  • Abstract view in electronic format (.lef and .lib files)
  • DRC, LVS, antenna reports in electronic format (.summary, .report files)
  • Datasheet in electronic format (.pdf file)

Technical Specifications

Foundry, Node
Global Foundries Embedded EEPROM 0.13 um
Maturity
silicon proven
Availability
Now
GLOBALFOUNDRIES
Silicon Proven: 130nm
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Semiconductor IP