The rapid proliferation of high-performance mobile and handheld devices has resulted in increasing requirements for non-volatile memory. Memory interfaces with larger capacities and faster access times are needed.
In response to these trends, SD 4.1 UHS-II or sd 4.1 uhs-ii achieves a peak interface speed of 3.12Gb/s. Arasan’s UHS-II PHY is compliant with the draft specification of UHS-II and is an extremely area and power efficient implementation. This interface is backward compatible with legacy SD cards. Both Host and Device UHS-II PHY configurations are available
The UHS-II PHY IP is a comprehensive, silicon-proven configurable core that has been ported to multiple process nodes and leading foundries. It uses sub-LVDS signaling consisting of one pair each for transmit, receive and an additional reference clock. This low-pin interface has reduced power consumption and low EMI. To further reduce power, the reference clock operates at 1/15 or 1/30 of the data transfer speed. This differential clock operates between 26MHz to 52MHz and is carried over the legacy SD lines DAT0, DAT1.
Arasan’s SD 4.1 UHS II PHY operates in both the Full-duplex and Half-duplex modes. It includes a 8b/10b encoder/decoder. The controller side interface of the UHS II PHY operates in the range from 39MB/s to 156MB/s. The default data lane D0 is used for downstream connection and the D1 lane is used for the other direction. An 8b/10b coding scheme is used. To improve testability, the SD 4.1 UHS II PHY implements the standard loopback paths.
SD 4.1 UHS-II PHY for TSMC 12nm FF
Overview
Key Features
- Compliant to SD Specifications Part 1 UHS-II Specification Volume 2: PHY* and SD Specifications Part 1 UHS II Specification Volume 1: System and Protocol”
- Per lane data rate between 390Mb/s to 1.56Gb/s
- Supports peak interface speed of 3.12Gb/s (Half-duplex); 1.56Gb/s in Full-duplex mode
- Sub-LVDS Differential PHY signaling
- Low frequency differential reference clock (1/15 or 1/30) of data rate
- Supports Spread Spectrum clocking to reduce EMI
- Flexible transmission rates from 390Mb/s – 1.56Gb/s (each lane)
- Multiple power saving modes: Dormant, Line standby
- Low power, reduced EMI operationv
- Integrated solution with built-in termination, no external components required
- Easily ported to various process nodes and foundries
Benefits
- Silicon proven, fully compliant core
- Premier direct support from Arasan IP core designers
- Easy-to-use industry standard test environment
- Unencrypted source code allows easy implementation
- Reuse Methodology Manual guidelines (RMM) compliant verilog code.
Deliverables
- GDSII database
- LVS Netlist
- Physical Abstract Model (LEF)
- Timing Models
- Behavioral Models
- Design Integration Guide
- Technical Documentation
Technical Specifications
Foundry, Node
TSMC 12nm FF
Maturity
Contact Sales
Availability
Contact Sales
TSMC
Pre-Silicon:
12nm