LVDS Transceiver in TSMC 28nm

Overview

A 2Gbps LVDS Tranceiver in TSMC 28nm

This 1.8V LVDS transceiver, designed for TSMCs 28nm process, delivers high-speed, low-power differential signaling with superior signal integrity. Engineered with 1.8V thick oxide devices and a 0.8V standard core interface, it operates ef- ficiently across a wide temperature range (-40°C to 125°C). The transceiver supports data rates up to 2Gbps, offering low jitter, robust ESD protection (+2kV HBM, +500V CDM), and integrated on-die termination for enhanced noise immunity. Opti- mized for applications requiring precision and reliability, this LVDS I/O solution ensures clean, high-speed data transmission ideal for imaging systems, communication interfaces, and high-performance computing.

Operating Conditions

Parameter Value
Devices 1.8V Thick and 0.9V Thin Oxides
BEOL 8 Metals Min.
VDDIO 1.8V
VDD 0.8V
Temperature -40C to 125C
ESD +2kV HBM, +500V CDM

Key Features

  •  2Gbps transmit and receive modes
  •  Available 100 ohm on-die termination
  •  Selectable pre-emphasis for high speeds at heavier loads
  •  +2kV HBM & +500V CDM protection
  •  Input and output disable

Block Diagram

LVDS Transceiver in TSMC 28nm Block Diagram

Technical Specifications

Short description
LVDS Transceiver in TSMC 28nm
Vendor
Vendor Name
Foundry, Node
TSMC 28nm
TSMC
Pre-Silicon: 28nm
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Semiconductor IP