A 2Gbps LVDS Tranceiver in TSMC 28nm
This 1.8V LVDS transceiver, designed for TSMCs 28nm process, delivers high-speed, low-power differential signaling with superior signal integrity. Engineered with 1.8V thick oxide devices and a 0.8V standard core interface, it operates ef- ficiently across a wide temperature range (-40°C to 125°C). The transceiver supports data rates up to 2Gbps, offering low jitter, robust ESD protection (+2kV HBM, +500V CDM), and integrated on-die termination for enhanced noise immunity. Opti- mized for applications requiring precision and reliability, this LVDS I/O solution ensures clean, high-speed data transmission ideal for imaging systems, communication interfaces, and high-performance computing.
Operating Conditions
| Parameter | Value |
| Devices | 1.8V Thick and 0.9V Thin Oxides |
| BEOL | 8 Metals Min. |
| VDDIO | 1.8V |
| VDD | 0.8V |
| Temperature | -40C to 125C |
| ESD | +2kV HBM, +500V CDM |
