0.9V/2.5V I/O Library in TSMC 55nm

Overview

A 0.9V/2.5V In-Line I/O Library in TSMC 55LP.

This SoundWire Digital I/O Library in TSMC 55nm LP is a silicon-proven interface solution for high-performance au- dio applications. Designed for 0.9V/2.5V operation, the Data, Clock, and Select I/Os, ensuring seamless integration with SoundWire-based systems. Engineered for reliability, the I/O cells meet 2kV HBM, 500V CDM, and 8kV system-level ESD protection (150pF, 330 Ohm direct contact to housing), with 18kV air discharge capability, offering exceptional robustness against electrostatic and environmental stress. This library is ideal for low-power, high-fidelity audio-designs, this I/O library deliver high signal integrity and compliance with industry standards.

Operating Conditions

Feature Value
Core Device 0.9V Standard
I/O Device 2.5V Standard
BEOL 1P9M
PAD CUP, 60um pitch
Cell Height 80um
VDD Core 0.9V +/- 10%
VDDIO 1.2V to 1.8V
Tj -40C to 125C
ESD 2kV HBM, 500V CDM, Latch-up Immune

 Cell Names

Cell Name Cell Type
TE_DVSS GND/Substrate
TE_AVSS GND/Substrate
TE_AVDD Power Pad
TE_DVDD Power Pad
TE_ANA Analog I/O
TE_DATA Digital I/O
TE_CLK Digital I/O
TE_SELECT Digital I/O

 

 

Key Features

  • SELECT I/O Features
    •  6.5V Tolerant OTP input
    •  Schmitt Trigger Input
    •  10Mhz digital output mode
    •  1.8Mohm input pulldown
  •  DATA I/O Features
    •   Power down mode
    •   Output enable/disable
    •  Analog test point
    •   Level Shifting Input
    •   Trimmable delay circuit
  •  CLOCK I/O Features
    •  Power down mode with clock monitoring
    •   Schmitt Trigger
    •  Level Shifting Input
    •   Trimmable delay circuit
    •   Internal 3Mohm pull-down resistor

Block Diagram

0.9V/2.5V I/O Library in TSMC 55nm Block Diagram

Technical Specifications

Foundry, Node
TSMC 55LP
TSMC
Silicon Proven: 55nm LP
×
Semiconductor IP