Foundation IP for 7nm FinFETs: Design and Implementation
Jamil Kawa, Synopsys Fellow, Synopsys
Learn about the challenges of IP design and implementation for 7nm FinFETs. Along with the performance and area benefits that the node brings, designers must understand the significant technical challenges stemming from increasing variability associated with tighter pitches and more complex lithography steps. Design for variability and reliability considerations will require comprehensive modeling and analysis as well as advanced circuit techniques such as on chip sensing and compensation.
Related Semiconductor IP
- 12-bit, 400 MSPS SAR ADC - TSMC 12nm FFC
- 10-bit Pipeline ADC - Tower 180 nm
- NoC Verification IP
- Simulation VIP for Ethernet UEC
- Automotive Grade PLLs, Oscillators, SerDes PMAs, LVDS/CML IP
Related Articles
- Design and Implementation of Test Infrastructure for Higher Parallel Wafer Level Testing of System-on-Chip
- Design and implementation of a hardened cryptographic coprocessor for a RISC-V 128-bit core
- Integrating VESA DSC and MIPI DSI in a System-on-Chip (SoC): Addressing Design Challenges and Leveraging Arasan IP Portfolio
- Shift Left for More Efficient Block Design and Chip Integration
Latest Articles
- Analog Foundation Models
- Modeling and Optimizing Performance Bottlenecks for Neuromorphic Accelerators
- RISC-V Based TinyML Accelerator for Depthwise Separable Convolutions in Edge AI
- Exclude Smart in Functional Coverage
- A 0.32 mm² 100 Mb/s 223 mW ASIC in 22FDX for Joint Jammer Mitigation, Channel Estimation, and SIMO Data Detection