Foundation IP for 7nm FinFETs: Design and Implementation
Jamil Kawa, Synopsys Fellow, Synopsys
Learn about the challenges of IP design and implementation for 7nm FinFETs. Along with the performance and area benefits that the node brings, designers must understand the significant technical challenges stemming from increasing variability associated with tighter pitches and more complex lithography steps. Design for variability and reliability considerations will require comprehensive modeling and analysis as well as advanced circuit techniques such as on chip sensing and compensation.
Related Semiconductor IP
- Post-Quantum Digital Signature IP Core
- Compact Embedded RISC-V Processor
- Power-OK Monitor
- RISC-V-Based, Open Source AI Accelerator for the Edge
- Securyzr™ neo Core Platform
Related White Papers
- Design and Implementation of Test Infrastructure for Higher Parallel Wafer Level Testing of System-on-Chip
- Design and implementation of a hardened cryptographic coprocessor for a RISC-V 128-bit core
- Integrating VESA DSC and MIPI DSI in a System-on-Chip (SoC): Addressing Design Challenges and Leveraging Arasan IP Portfolio
- Shift Left for More Efficient Block Design and Chip Integration
Latest White Papers
- DRsam: Detection of Fault-Based Microarchitectural Side-Channel Attacks in RISC-V Using Statistical Preprocessing and Association Rule Mining
- ShuffleV: A Microarchitectural Defense Strategy against Electromagnetic Side-Channel Attacks in Microprocessors
- Practical Considerations of LDPC Decoder Design in Communications Systems
- A Direct Memory Access Controller (DMAC) for Irregular Data Transfers on RISC-V Linux Systems
- A logically correct SoC design isn’t an optimized design