Foundation IP for 7nm FinFETs: Design and Implementation
Jamil Kawa, Synopsys Fellow, Synopsys
Learn about the challenges of IP design and implementation for 7nm FinFETs. Along with the performance and area benefits that the node brings, designers must understand the significant technical challenges stemming from increasing variability associated with tighter pitches and more complex lithography steps. Design for variability and reliability considerations will require comprehensive modeling and analysis as well as advanced circuit techniques such as on chip sensing and compensation.
Related Semiconductor IP
- Sine Wave Frequency Generator
- CAN XL Verification IP
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1.22V/1uA Reference voltage and current source
- 1.2V SLVS Transceiver in UMC 110nm
Related White Papers
- Design and Implementation of Test Infrastructure for Higher Parallel Wafer Level Testing of System-on-Chip
- Design and implementation of a hardened cryptographic coprocessor for a RISC-V 128-bit core
- Integrating VESA DSC and MIPI DSI in a System-on-Chip (SoC): Addressing Design Challenges and Leveraging Arasan IP Portfolio
- Shift Left for More Efficient Block Design and Chip Integration
Latest White Papers
- OmniSim: Simulating Hardware with C Speed and RTL Accuracy for High-Level Synthesis Designs
- Balancing Power and Performance With Task Dependencies in Multi-Core Systems
- LLM Inference with Codebook-based Q4X Quantization using the Llama.cpp Framework on RISC-V Vector CPUs
- PCIe 5.0: The universal high-speed interconnect for High Bandwidth and Low Latency Applications Design Challenges & Solutions
- Basilisk: A 34 mm2 End-to-End Open-Source 64-bit Linux-Capable RISC-V SoC in 130nm BiCMOS