SMIC to Report Tunnel-FET Extension to CMOS

Peter Clarke, EETimes
10/9/2015 09:14 AM EDT

LONDON—Chinese foundry Semiconductor Manufacturing International Corp. has manufactured complementary Tunnel FETs (C-TFETs) that operate at 0.4V using a CMOS baseline technology.

Because of the low voltage operation, SMIC (Shanghai, China) is declaring that the platform has potential for ultra low-power applications such as the Internet of Things (IoT).

The details are due to be revealed at the upcoming International Electron Devices Meeting (IEDM) scheduled to take place at the Washington D.C. Hilton Hotel from December 7 to 9, 2015.

Although the minimum geometry of the process is not revealed in the abstract of the paper, it is one of the more interesting IEDM papers because of suggestions that a TFET process could be relatively near to deployment. The paper was written by researchers from Peking University and SMIC.

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