Samsung Running 28nm FDSOI Chip Process
Peter Clarke, EETimes
12/23/2015 11:30 AM EST
LONDON—Samsung is running 28nm fully-depleted silicon-on-insulator (FDSOI) wafers for STMicroelectronics, the developer of the technology, and has other customers lined up, according to an Advanced Substrate News report.
The report is in the form of an interview with Kelvin Low senior director of marketing for Samsung Foundry and Axel Foscher, director of Samsung System LSI business in Europe. Soitec SA, the manufacturer of SOI wafers used in FDSOI production, is the publisher of Advanced Substrate News.
Related Semiconductor IP
- AES GCM IP Core
- High Speed Ethernet Quad 10G to 100G PCS
- High Speed Ethernet Gen-2 Quad 100G PCS IP
- High Speed Ethernet 4/2/1-Lane 100G PCS
- High Speed Ethernet 2/4/8-Lane 200G/400G PCS
Related News
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
- Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design
- sureCore Delivers FDSOI 28nm Memory Compiler
Latest News
- HPC customer engages Sondrel for high end chip design
- PCI-SIG’s Al Yanes on PCIe 7.0, HPC, and the Future of Interconnects
- Ubitium Debuts First Universal RISC-V Processor to Enable AI at No Additional Cost, as It Raises $3.7M
- Cadence Unveils Arm-Based System Chiplet
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers