Samsung Running 28nm FDSOI Chip Process
Peter Clarke, EETimes
12/23/2015 11:30 AM EST
The report is in the form of an interview with Kelvin Low senior director of marketing for Samsung Foundry and Axel Foscher, director of Samsung System LSI business in Europe. Soitec SA, the manufacturer of SOI wafers used in FDSOI production, is the publisher of Advanced Substrate News.
To read the full article, click here
Related Semiconductor IP
- HBM4 PHY IP
- eFuse Controller IP
- Secure Storage Solution for OTP IP
- Ultra-Low-Power LPDDR3/LPDDR2/DDR3L Combo Subsystem
- MIPI D-PHY and FPD-Link (LVDS) Combinational Transmitter for TSMC 22nm ULP
Related News
- DEEPX Signs 2nm Process Agreement with Samsung Foundry to Develop World’s First On-Device Generative AI Chip ‘DX-M2’
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
- Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design
Latest News
- LTSCT and Andes Technology Sign Strategic IP Licensing Master Agreement to accelerate RISC-V Based Advanced Semiconductor Solutions
- Global Semiconductor Sales Increase 29.8% Year-to-Year in November
- BAE Systems Licenses Time Sensitive Networking (TSN) Ethernet IP Cores from CAST
- HBM4 Mass Production Delayed to End of 1Q26 By Spec Upgrades and Nvidia Strategy Adjustments
- ASICLAND Secures USD 17.6 Million Storage Controller Mass Production Contract