Samsung Running 28nm FDSOI Chip Process
Peter Clarke, EETimes
12/23/2015 11:30 AM EST
LONDON—Samsung is running 28nm fully-depleted silicon-on-insulator (FDSOI) wafers for STMicroelectronics, the developer of the technology, and has other customers lined up, according to an Advanced Substrate News report.
The report is in the form of an interview with Kelvin Low senior director of marketing for Samsung Foundry and Axel Foscher, director of Samsung System LSI business in Europe. Soitec SA, the manufacturer of SOI wafers used in FDSOI production, is the publisher of Advanced Substrate News.
To read the full article, click here
Related Semiconductor IP
- Flash Memory LDPC Decoder IP Core
- SLM Signal Integrity Monitor
- All Digital Fractional-N RF Frequency Synthesizer PLL in GlobalFoundries 22FDX
- USB 4.0 V2 PHY - 4TX/2RX, TSMC N3P , North/South Poly Orientation
- TSMC CLN5FF GUCIe LP Die-to-Die PHY
Related News
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
- Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design
- sureCore Delivers FDSOI 28nm Memory Compiler
Latest News
- SEMIFIVE Files for Pre-IPO Review on KRX
- Innosilicon Scales LPDDR5X/5/4X/4 and DDR5/4 Combo IPs to 28nm and 22nm, Cementing Its Position as the ‘One Stop’ for Memory Interface Solutions
- Synopsys Completes Acquisition of Ansys
- Zephyr 4.0 Now Available for SCR RISC-V IP
- Lattice Semiconductor and Missing Link Electronics Become Partners to Accelerate FPGA Design Projects