Samsung Running 28nm FDSOI Chip Process
Peter Clarke, EETimes
12/23/2015 11:30 AM EST
LONDON—Samsung is running 28nm fully-depleted silicon-on-insulator (FDSOI) wafers for STMicroelectronics, the developer of the technology, and has other customers lined up, according to an Advanced Substrate News report.
The report is in the form of an interview with Kelvin Low senior director of marketing for Samsung Foundry and Axel Foscher, director of Samsung System LSI business in Europe. Soitec SA, the manufacturer of SOI wafers used in FDSOI production, is the publisher of Advanced Substrate News.
To read the full article, click here
Related Semiconductor IP
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1.22V/1uA Reference voltage and current source
- 1.2V SLVS Transceiver in UMC 110nm
- UALink PCS IP Core
- 1.8V/3.3V GPIO With I2C Compliant ODIO in GF 55nm
Related News
- DEEPX Signs 2nm Process Agreement with Samsung Foundry to Develop World’s First On-Device Generative AI Chip ‘DX-M2’
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
- Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design
Latest News
- Quintauris and TASKING Partner to Join Forces to Power RISC-V in Automotive
- 2Q25 Foundry Revenue Surges 14.6% to Record High, TSMC’s Market Share Hits 70%
- EXTOLL received GlobalFoundries Award for “Interface IP Partner of the Year”
- AiM Future and Franklin Wireless Sign MOU to Jointly Develop Lightweight AI Model and High-Efficiency 1 TOPS AI SoC Chipset
- GlobalFoundries and Silicon Labs Partner to Scale Industry-Leading Wi-Fi Connectivity