IEDM: Intel embeds MRAM in FinFET process

October 22, 2018 // By Peter Clarke, eeNews

Intel has followed in the footsteps of Globalfoundries, Samsung and TSMC in developing magnetic RAM as an embedded non-volatile memory (NVM) for use in IC manufacturing.

The company is due to present a paper outlining the technology at the International Electron Devices Meeting (IEDM) that takes place December 1 to 5 in San Francisco, California.

While this is an academic presentation and does not guarantee a commercial offering will follow, it seems likely that Intel will follow through, not least because TSMC is reported to be due to offer embedded MRAM at 22nm FinFET this year.

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