Infineon affirms move to 'fab-lite' strategy
SAN FRANCISCO -- Dec 1, 2005 — Infineon Technologies AG Chairman and CEO Wolfgang Ziebart affirmed Thursday (Dec. 1) that the company will not build manufacturing capacity below the 90-nanometer node, migrating to a "fab-lite" strategy.
In a phone interview with EE Times, Ziebart, as others have done, openly wondered how many companies would ever operate their own 65-nm, 300-millimeter fabs. Ziebart mentioned Intel Corp. and possibly Texas Instruments Inc., but suggested that few — if any — other companies have sufficient demand to justify the $4-5 billion dollar expense associated with a 65-nm fab.
Ziebart made it clear that Infineon plans to continue operating existing fabs in Germany, France and Malaysia. Ziebart said the company expects the technologies manufactured within those fabs will be in use for "quite a while."
To read the full article, click here
Related Semiconductor IP
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1.22V/1uA Reference voltage and current source
- 1.2V SLVS Transceiver in UMC 110nm
- Neuromorphic Processor IP
- Lossless & Lossy Frame Compression IP
Related News
- TSMC 6-inch Wafer Fab Exit Affirms Strategy Shift
- Infineon plans €5bn 300mm fab in Dresden
- Mentor offers to buy IKOS for $102 million in move to block Synopsys
- ARM Appoints Andor as New Tools Partner in Japan; Move Further Strengthens Global Network of Distributors
Latest News
- SignatureIP Achieves PCI-SIG® PCIe® 5.0 Certification, Joining Elite Group on Official Integrators List
- GUC Monthly Sales Report – August 2025
- eSOL and Infineon Enter Strategic Partnership for Next-generation Automotive Platforms Based on RISC-V/TriCore/Arm Microcontrollers
- Synopsys and GlobalFoundries Establish Pilot Program to Bring Chip Design and Manufacturing to University Classrooms
- Cadence to Acquire Hexagon’s Design & Engineering Business, Accelerating Expansion in Physical AI and System Design and Analysis