Infineon affirms move to 'fab-lite' strategy
SAN FRANCISCO -- Dec 1, 2005 — Infineon Technologies AG Chairman and CEO Wolfgang Ziebart affirmed Thursday (Dec. 1) that the company will not build manufacturing capacity below the 90-nanometer node, migrating to a "fab-lite" strategy.
In a phone interview with EE Times, Ziebart, as others have done, openly wondered how many companies would ever operate their own 65-nm, 300-millimeter fabs. Ziebart mentioned Intel Corp. and possibly Texas Instruments Inc., but suggested that few — if any — other companies have sufficient demand to justify the $4-5 billion dollar expense associated with a 65-nm fab.
Ziebart made it clear that Infineon plans to continue operating existing fabs in Germany, France and Malaysia. Ziebart said the company expects the technologies manufactured within those fabs will be in use for "quite a while."
To read the full article, click here
Related Semiconductor IP
- 1.8V/3.3V I/O Library with 5V ODIO & Analog in TSMC 16nm
- ESD Solutions for Multi-Gigabit SerDes in TSMC 28nm
- High-Speed 3.3V I/O library with 8kV ESD Protection in TSPCo 65nm
- Verification IP for DisplayPort/eDP
- Wirebond Digital and Analog Library in TSMC 65nm
Related News
- Infineon plans €5bn 300mm fab in Dresden
- Mentor offers to buy IKOS for $102 million in move to block Synopsys
- ARM Appoints Andor as New Tools Partner in Japan; Move Further Strengthens Global Network of Distributors
- Lexra to move for dismissal of MIPS patent suit
Latest News
- Movellus and RTX’s SEAKR Engineering Collaborate on Advancing Mission-Critical ASICs
- DARPA Selects Cerebras to Deliver Next Generation, Real-Time Compute Platform for Advanced Military and Commercial Applications
- Rapidity Space to Demonstrate Performance Capabilities of the GR765 Platform with SIMD Support
- Telestream Integrates intoPIX’s JPEG XS Technology into PRISM for Advanced IP Video Monitoring
- UMC Unveils New Fab Expansion in Singapore in Grand Opening Ceremony